Rapid growth of Si by solid‐phase epitaxy, including comparisons to conventional Si crystal growth

摘要

A recent development in solid‐phase epitaxy is discussed, namely, that Si can be rapidly grown back into a dissolved pit in a (111) Si substrate to just exactly fill the pit, at which time growth ceases. This growth process is driven by the nearby dissolution of amorphous Si and, unlike most conventional growth processes, is not a near‐equilibrium process. Also the solid‐state growth is strongly affected by volume changes occurring during growth.