Growth of Ru_2Si_3 Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers

摘要

Semiconducting ruthenium silicide (Ru_2Si_3) polycrystalline thin films were grown by solid phase epitaxy using Ru-Si amorphous layers on Si substrates. The formation of Ru_2Si_3 phase was confirmed by XRD and Raman measurements when the amorphous layers were annealed at 600-900°C in a vacuum. The Ru_2Si_3 thin films showed a low electron concentration of 1 × 10~(16) cm~(-3) with a high mobility of 430-940 cm~2V~(-1)s~(-1). Photoluminescence (PL) at ～0.8 eV was observed in the Ru_2Si_3 films.