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Improved Techniques for Growth of Large-Area Single-Crystal Si Sheets Over SiO2 Using Lateral Epitaxy by Seeded Solidification

机译：作者：张莹莹，张莹，王莹，李楠，材料导报maTERIaLs

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Tsaur, B. Y.; Fan, J. C. C.; Geis, M. W.; Silversmith, D. J.; Mountain, R. W.;
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年度 1981
页码 p.1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconducting films; Epitaxial growth; Single crystals; MOSFET semiconductors; Reprints;

机译：半导体薄膜;外延生长;单晶; mOsFET半导体;重印;

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机译：van der waals半导体的大面积单晶膜的播种2d外延2h mote_2
2. Large-area single-crystal organic patterned thin films by vertically confined lateral crystal growth via capillary force lithography [J] . Park Yoonkyung, Park Jinseon, Cho Sangho, Applied Surface Science . 2019,第NOVa15期

机译：通过毛细管力光刻技术垂直限制横向晶体生长的大面积单晶有机图案化薄膜
3. Large-area single-crystal organic patterned thin films by vertically confined lateral crystal growth via capillary force lithography [J] . Park Yoonkyung, Park Jinseon, Cho Sangho, Applied Surface Science . 2019,第Nova15期

机译：通过毛细管力光刻技术垂直限制横向晶体生长的大面积单晶有机图案化薄膜
4. Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators [C] . Fan J.C.C., Geis M.W., Tsaur B.-Y. Electron Devices Meeting, 1980 International . -1

机译：通过晶种凝固进行横向外延以在绝缘子上生长单晶硅膜
5. Lateral epitaxial growth techniques for gallium nitride thin films on 6H-silicon carbide(0001) substrates via metalorganic vapor phase epitaxy. [D] . Thomson, Darren Brent. 2001

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6. Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing [O] . Elena Alexandra Serban, Justinas Palisaitis, Chia-Cheng Yeh, -1

机译：反应性磁控溅射外延在单模激光作用下在SiOx / Si（001）衬底上单晶纤锌矿GaN纳米棒的选择性区域生长
7. Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth [O] . Zhi Liu, Juanjuan Wen, Tianwei Zhou, 2015

机译：利用非晶硅晶种通过快速熔化生长在绝缘衬底上横向生长单晶锗
8. Single-Crystal Si Films on SiO2 Prepared by Using a Stationary Graphite Heater for Lateral Epitaxy by Seeded Solidification [R] . Fan, J. C. C., Tsaur, B. Y., Geis, M. W. 1981

机译：采用固定石墨加热器制备siO2单晶si薄膜，通过种子凝固制备横向外延

Improved Techniques for Growth of Large-Area Single-Crystal Si Sheets Over SiO2 Using Lateral Epitaxy by Seeded Solidification

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