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Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth

机译：利用非晶硅晶种通过快速熔化生长在绝缘衬底上横向生长单晶锗

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Zhi Liu; Juanjuan Wen; Tianwei Zhou; Chunlai Xue; Yuhua Zuo; Chuanbo Li; Buwen Cheng; Qiming Wang;
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年度 2015
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1. Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth [J] . Liu Zhi, Wen Juanjuan, Zhou Tianwei, Thin Solid Films . 2015,第DECa31期

机译：利用非晶硅晶种通过快速熔化生长在绝缘衬底上横向生长单晶锗
2. Giant-Lateral-Growth of SiGe Stripes on Insulating-Substrate by Self-Organized-Seeding and Rapid-Melting-Growth in Solid-Liquid Coexisting Region [J] . Ryo Matsumura, Ryusuke Kato, Yuki Tojo ECS Solid State Letters . 2014,第5期

机译：固液共存区域中自组织播种和快速熔炼生长SiGe条纹在绝缘基板上的横向生长
3. (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique [J] . Kaoru Toko, rnMasashi Kurosawa, rnHiroyuki Yokoyama, Applied physics express . 2010,第7期

机译：（100）结合Si微晶技术的快速熔体生长在绝缘基板上的取向控制Ge大条纹
4. High-mobility defect-free ge single-crystals by rapid melting growth on insulating substrates [C] . 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology . 2010

机译：通过在绝缘基板上快速熔化生长的高迁移率无缺陷ge单晶
5. Nanopattern-guided growth of single-crystal silicon on amorphous substrates and high-performance sub-100 nm thin-film transistors for three-dimensional integrated circuits. [D] . Gu, Jian. 2003

机译：在非晶衬底和用于3D集成电路的高性能亚100 nm薄膜晶体管上的纳米图形引导的单晶硅生长。
6. Single-crystal metal growth on amorphous insulating substrates [O] . Kai Zhang, Xue Bai Pitner, Rui Yang, 2018

机译：在非晶绝缘衬底上生长单晶金属
7. Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds [O] . T. Sakane, K. Toko, T. Tanaka, 2011

机译：通过Si（111）微粒的快速熔化生长，应变单晶GOI（GE在绝缘体上）阵列
8. Improved Techniques for Growth of Large-Area Single-Crystal Si Sheets Over SiO2 Using Lateral Epitaxy by Seeded Solidification [R] . Tsaur, B. Y., Fan, J. C. C., Geis, M. W., 1981

机译：作者：张莹莹，张莹，王莹，李楠，材料导报maTERIaLs

Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth

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