首页> 外国专利> SUBSTRATE FOR DIAMOND GROWTH AND MANUFACTURING METHOD FOR THE SAME, AND MANUFACTURING METHOD FOR LARGE-AREA SINGLE-CRYSTAL DIAMOND THIN FILM AND SELF-SUPPORTING FILM USING THE SAME

SUBSTRATE FOR DIAMOND GROWTH AND MANUFACTURING METHOD FOR THE SAME, AND MANUFACTURING METHOD FOR LARGE-AREA SINGLE-CRYSTAL DIAMOND THIN FILM AND SELF-SUPPORTING FILM USING THE SAME

机译:金刚石生长用基质及其制造方法,大面积单晶金刚石薄膜和使用该薄膜的自支撑膜的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a crack-free, large-area single-crystal diamond thin film and self-supporting film, and also to provide a manufacturing method for the same.;SOLUTION: A manufacture method for a diamond self-supporting film 13 comprises the steps of: growing a cBN layer 10 formed of a single-phase film on a base substrate 9; growing a separation layer 11 including hBN on the cBN layer 10; growing a diamond 12 on the separation layer 11 including the hBN; cleaving the separation layer 11 including the hBN along a surface perpendicular to a lamination direction of the separation layer 11 including the hBN to divide the cBN layer and the diamond 12; and removing the separated separation layer 11b including the hBN, which remains adhering to the diamond 12.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供无裂纹的大面积单晶金刚石薄膜和自支撑膜,并提供其制造方法。解决方案:金刚石自支撑的制造方法膜13包括以下步骤:在基础基板9上生长由单相膜形成的cBN层10;在cBN层10上生长包括hBN的分离层11;在包含hBN的分离层11上生长金刚石12;沿垂直于包括hBN的分离层11的层叠方向的表面切割包括hBN的分离层11,以划分cBN层和金刚石12;并去除分离出的分离层11b,该分离层11b包括仍附着在金刚石12上的hBN。版权所有:(C)2015,JPO&INPIT

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