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Growth and Characterization of Li-doped ZnO thin films on nanocrystalline diamond substrates

机译:纳米晶金刚石基材锂掺杂ZnO薄膜的生长与表征

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Nanocrystalline diamond(NCD) films with a mean surface roughness of 23.8 nm were grown on silicon substrates in a hot filament chemical vapor deposition(HFCVD) system. Then,Zn_(1-x)Li_xO (x=0, 0.05, 0.10, 0.15) films were deposited on these NCD films by radio-frequency(RF) reactive magnetron sputtering method. When x was 0.1, the Li-doped ZnO film had a larger resistivity more than 10~8Ω·cm obtained from Hall effect measurement. All the Zn_(1-x)Li_xO films had a strong c-axis orientation structure determined by X-ray diffraction (XRD). The above results suggested that the Li-doped ZnO film/NCD structure prepared in this work was attractive for the application of high frequency surface acoustic wave (SAW) devices.
机译:在热丝化学化学气相沉积(HFCVD)系统中,在硅基板上生长具有平均表面粗糙度为23.8nm的纳米晶金刚石(NCD)薄膜。然后,通过射频(RF)反应性磁控溅射方法在这些NCD膜上沉积在这些NCD膜上的Zn_(1-x)Li_xO(x = 0,0.05,0.10,0.15)。当X为0.1时,Li-掺杂的ZnO膜的电阻率较大,电阻率大于10〜8Ω·cm,从霍尔效应测量获得。所有Zn_(1-x)Li_xo膜具有强大的C轴取向结构,由X射线衍射(XRD)确定。上述结果表明,在该工作中制备的Li-掺杂ZnO膜/ NCD结构对于应用高频表面声波(SAW)器件具有吸引力。

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