Temperature dependence of growth orientation and surface morphology of Li-doped ZnO thin films on SiO2/Si substrates

摘要

ZnO thin films doped with Li (ZnO:Li) were deposited onto SiO2/Si (100) substrates by direct-current sputtering technique in the temperature range from room temperature to 500 degrees C. The crystalline structure, surface morphology and composition, and optical reflectivity of the deposited films were studied by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS) and optical reflection measurements. Rough surface p-type ZnO thin Film deposition was confirmed. The results indicated that the ZnO:Li Films growed at low temperatures show c-axis orientation, while a-axis growth direction is preferable at high temperatures. Moreover, the optical reflectivity from the Surface of the films matched very well with the obtained results. (C) 2008 WILEY-VCH GmbH & Co. KGaA, Weinbeim.