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Single-Crystal Si Films on SiO2 Prepared by Using a Stationary Graphite Heater for Lateral Epitaxy by Seeded Solidification

机译：采用固定石墨加热器制备siO2单晶si薄膜，通过种子凝固制备横向外延

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作者
Fan, J. C. C.; Tsaur, B. Y.; Geis, M. W.;
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年度 1981
页码 p.1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconducting films; Epitaxial growth; Silicon; Single crystals; Reprints;

机译：半导体薄膜;外延生长;硅;单晶;重印;
入库时间 2022-08-29 11:34:01

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专利

1. Single-Crystal Antimonene Films Prepared by Molecular Beam Epitaxy: Selective Growth and Contact Resistance Reduction of the 2D Material Heterostructure [J] . Chen Hsuan-An, Sun Hsu, Wu Chong-Rong, ACS applied materials & interfaces . 2018,第17期

机译：通过分子束外延制备的单晶锑膜：2D材料异质结构的选择性生长和接触电阻降低
2. Low-temperature single-crystal Si TFTs fabricated on Si films processed via sequential lateral solidification [J] . Crowder M.A., Carey P.G. IEEE Electron Device Letters . 1998,第8期

机译：在通过顺序横向凝固处理的硅膜上制造的低温单晶硅TFT
3. Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe_2 [J] . Xu Xiaolong, Pan Yu, Liu Shuai, Science . 2021,第6538期

机译：van der waals半导体的大面积单晶膜的播种2d外延2h mote_2
4. Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators [C] . Fan J.C.C., Geis M.W., Tsaur B.-Y. Electron Devices Meeting, 1980 International . -1

机译：通过晶种凝固进行横向外延以在绝缘子上生长单晶硅膜
5. Non-Prestonian RRs of poly-Si and SiO2 Films and Effect of Residual Stress on RRs of Various Types of SiO2 and Si 3N4 Films. [D] . Korkmaz, Sevim. 2017

机译：多晶硅和SiO2薄膜的非Prestonian RRs和残余应力对各种类型的SiO2和Si 3N4薄膜的RRs的影响。
6. Dataset on large area nano-crystalline graphite film (NCG) grown on SiO2 using plasma-enhanced chemical vapour deposition [O] . Camelia Albu, Sandra A.V. Eremia, Monica Lucia Veca, 2019

机译：使用等离子增强化学气相沉积法在SiO2上生长的大面积纳米晶石墨膜（NCG）上的数据集
7. Single-Crystal Antimonene Films Prepared by Molecular Beam Epitaxy: Selective Growth and Contact Resistance Reduction of the 2D Material Heterostructure [O] . -1

机译：通过分子束外延制备的单晶锑膜：2D材料异质结构的选择性生长和接触电阻降低
8. Improved Techniques for Growth of Large-Area Single-Crystal Si Sheets Over SiO2 Using Lateral Epitaxy by Seeded Solidification [R] . Tsaur, B. Y., Fan, J. C. C., Geis, M. W., 1981

机译：作者：张莹莹，张莹，王莹，李楠，材料导报maTERIaLs

Single-Crystal Si Films on SiO2 Prepared by Using a Stationary Graphite Heater for Lateral Epitaxy by Seeded Solidification

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