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Progress in 193nm Resists: Impact of The Development Process on Anhydride-Containing Resist Materials.

机译：193nm的进展抵抗：开发方法对含酐的抗蚀剂材料的影响。

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Robert D. Allen; Carl E. Larson; Hoa D. Truong; Philip J. Brock; Hiroshi Ito;
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1. Progress in 193nm Resists: Impact of the Development Process on Anhydride-Containing Resist Materials [J] . Robert DE.Allen, Carl E.Larson, Hoa D.Truong, Journal of Photopolymer Science and Technology . 2000,第4期

机译：193nm抗蚀剂的进展：开发工艺对含酐抗蚀剂材料的影响
2. Progress in 193nm Resists: Impact of the Development Process on Anhydride-Containing Resist Materials [J] . Robert DE.Allen, Carl E.Larson, Hoa D.Truong, Journal of Photopolymer Science and Technology . 2000,第4期

机译：193nm抗蚀剂的进展：开发工艺对含酐抗蚀剂材料的影响
3. Lithographic Performances of Non-Chemically Amplified Resist and Chemically Amplified Resist for 193nm Top Surface Imaging Process [J] . Cho-Won Koh, Ki-Ho Baik Journal of Photopolymer Science and Technology . 2000,第4期

机译：193nm顶表面成像工艺的非化学放大抗蚀剂和化学放大抗蚀剂的光刻性能
4. Progress of Topcoat and Resist Development for 193nm Immersion Lithography [C] . Katsumi Ohmori, Tomoyuki o, Toshikazu Takayama, Advances in Resist Technology and Processing XXIII pt.1 . 2006

机译：193nm浸没式光刻的面漆进展及抗蚀剂的发展
5. Electrical resistivity as a measure of change of state in substrates: Design, development and validation of a microprocessor-based system. [D] . Le, Dong D. 2009

机译：电阻率作为衡量基板状态变化的指标：基于微处理器的系统的设计，开发和验证。
6. Use of Two-Photon Lithography with a Negative Resist and Processing to Realise Cylindrical Magnetic Nanowires [O] . Joseph Askey, Matthew Oliver Hunt, Wolfgang Langbein, 2020

机译：负电阻双光子光刻技术的使用和加工以实现圆柱磁性纳米线
7. Recent Developments in Thin Film Imaging Resists and Processing for 193nm, 157nm and EUV [O] . D.W. Johnson, D. Minsek, S. Dionisio, 1998

机译：薄膜成像的最新进程抗蚀剂和193nm，157nm和EUV的加工
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Progress in 193nm Resists: Impact of The Development Process on Anhydride-Containing Resist Materials.

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