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Applying the resist on the resist application development device and resist application development method, and the resist membrane process device

机译:在抗蚀剂涂敷显影装置上涂敷抗蚀剂和抗蚀剂涂敷显影方法以及抗蚀剂膜处理装置

摘要

PROBLEM TO BE SOLVED: To provide a resist coating and developing apparatus, a resist coating and developing method, a resist-film processing apparatus, and a resist-film processing method, for reducing a line width roughness.;SOLUTION: The resist coating and developing apparatus 1 includes: a resist-film forming part configured to coat a resist onto a substrate to form a resist film thereon; a resist developing part 18 configured to develop the exposed resist film; a solvent-gas supply part 100 configured to expose the resist film, which has been developed and patterned by the resist developing part 18, to a first solvent having a solubility to the resist film in a gaseous atmosphere; and a solvent supply part 100 configured to supply, to the resist film which has been exposed to the first solvent, a second solvent having a solubility to the resist film.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种用于减小线宽粗糙度的抗蚀剂涂覆和显影设备,抗蚀剂涂覆和显影方法,抗蚀剂膜处理设备和抗蚀剂膜处理方法。显影装置1包括:抗蚀剂膜形成部,其被构造成将抗蚀剂涂覆到基板上以在其上形成抗蚀剂膜。抗蚀剂显影部18,其用于使曝光后的抗蚀剂膜显影。溶剂气体供给部100,其构成为将由抗蚀剂显影部18显影并形成图案的抗蚀剂膜暴露于在气体气氛中对抗蚀剂膜具有溶解性的第一溶剂。溶剂供给部100,其向已暴露于第一溶剂的抗蚀剂膜供给对抗蚀剂膜具有溶解性的第二溶剂。COPYRIGHT:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP5448536B2

    专利类型

  • 公开/公告日2014-03-19

    原文格式PDF

  • 申请/专利权人 東京エレクトロン株式会社;

    申请/专利号JP20090094269

  • 发明设计人 稲富 裕一郎;

    申请日2009-04-08

  • 分类号H01L21/027;G03F7/30;

  • 国家 JP

  • 入库时间 2022-08-21 16:13:59

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