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Sensitivity enhancement of t-BOC based chemically amplified resists through optimization of process prebake conditions.

机译：通过工艺预烘养条件优化的敏感性增强基于化学放大的抗蚀剂。

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A. E. Novembre; J. M. Kometani; W. W. Tai; E. Reichmanis; L. F. Thompson; J. E. Hanson;
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年度 1992
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1. Super High Sensitivity Enhancement by Photo-Sensitized Chemically Amplified Resist (PS-CAR) Process [J] . Seiichi Tagawa, Satoshi Enomoto, Akihiro Oshima Journal of Photopolymer Science and Technology . 2013,第6期

机译：通过光敏化学增强抗蚀剂（PS-CAR）工艺实现超高灵敏度
2. Super High Sensitivity Enhancement by Photo-Sensitized Chemically Amplified Resist (PS-CAR) Process [J] . Seiichi Tagawa, Satoshi Enomoto, Akihiro Oshima Journal of Photopolymer Science and Technology . 2013,第6期

机译：通过光敏化学增强抗蚀剂（PS-CAR）工艺实现超高灵敏度
3. Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 21 nm line width) using electron beam lithography with chemically amplified resist processes: I. Relationship between sensitivity and chemical gradient [J] . Kozawa Takahiro Japanese journal of applied physics . 2015,第5期

机译：使用化学放大的抗蚀剂工艺的电子束光刻技术制造7纳米四分之一间距（7纳米间距和21纳米线宽）的线和间隔图案的理论研究：I.灵敏度和化学梯度之间的关系
4. Sensitivity enhancement of chemically amplified EUV resist by adding diphenyl sulfone derivatives [C] . Kazumasa Okamoto, Shunpei Kawai, Takahiro Kozawa Conference on Advances in Patterning Materials and Processes . 2020

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5. Exploration of non-chemically amplified resists based on dissolution inhibitors for 193 nm lithography. [D] . Baylav, Burak. 2010

机译：探索基于溶出抑制剂的非化学放大抗蚀剂，用于193 nm光刻。
6. Enhanced Recovery of Phenolic and Tocopherolic Compounds from Walnut (Juglans Regia L.) Male Flowers Based on Process Optimization of Ultrasonic Assisted-Extraction: Phytochemical Profile and Biological Activities [O] . Anca Pop, Ionel Fizeșan, Laurian Vlase, 2021

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7. A new chemical amplification resist system based on novolac and t-BOC protected phosphazene as a dissolution inhibitor. [O] . KWANG-DUK AHN, JONG-HEE KANG, SEONG-JU KIM, 1992

机译：基于酚醛清漆和T-BOC保护磷腈的新型化学放大抗蚀剂系统作为溶解抑制剂。

Sensitivity enhancement of t-BOC based chemically amplified resists through optimization of process prebake conditions.

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