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A new chemical amplification resist system based on novolac and t-BOC protected phosphazene as a dissolution inhibitor.

机译：基于酚醛清漆和T-BOC保护磷腈的新型化学放大抗蚀剂系统作为溶解抑制剂。

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KWANG-DUK AHN; JONG-HEE KANG; SEONG-JU KIM; BYUNG-SUN PARK; CHAN-EON PARK; CHUN-GEUN PARK;
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年度 1992
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1. A Chemically Amplified, Negative-type Photosensitive Poly(phenylene ether ketone) (PEK) Resist Based on Ketal-protected PEK and a Photoacid Generator [J] . Yuta Saito, Kazuya Matsumoto, Tomoya Higashihara Chemistry Letters . 2009,第11期

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2. A Chemically Amplified, Negative-type Photosensitive Poly(phenylene ether ketone) (PEK) Resist Based on Ketal-protected PEK and a Photoacid Generator [J] . Yuta Saito, Kazuya Matsumoto, Tomoya Higashihara Chemistry Letters . 2009,第11期

机译：基于缩酮保护的PEK和光致产酸剂的化学放大负型光敏聚苯醚酮（PEK）抗蚀剂
3. High sensitivity nonchemically amplified molecular resists based on photosensitive dissolution inhibitors [J] . Richard A. Lawson, Laren M. Tolbert, Clifford L. Henderson Journal of Vacuum Science & Technology . 2010,第6期

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4. Post-Exposure Bake Kinetics in Epoxy Novolac-Based Chemically Amplified Resists [C] . P.Argitis, S.Boyatzis, I.Raptis, ACS national meeting . 1998

机译：环氧树脂基于酚醛清漆的化学放大抗蚀剂的曝光后烘烤动力学
5. Exploration of non-chemically amplified resists based on dissolution inhibitors for 193 nm lithography. [D] . Baylav, Burak. 2010

机译：探索基于溶出抑制剂的非化学放大抗蚀剂，用于193 nm光刻。
6. Dissolution of Metals in Different Bromide-Based Systems: Electrochemical Measurements and Spectroscopic Investigations [O] . Simona Varvara, Sorin-Aurel Dorneanu, Alexandru Okos, 2020

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7. The Decrease of Dissolution Rate in Unexposed Areas of Chemically Amplified Three-Component Resist by Means of t-Butyl Carboxyl Ester as a Dissolution Inhibitor. [O] . Hideo HORIBE 1996

机译：通过叔丁基羧酸叔丁酯作为溶解抑制剂，通过叔丁基羧基抗溶胀地区溶出速率降低。

A new chemical amplification resist system based on novolac and t-BOC protected phosphazene as a dissolution inhibitor.

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