Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 21 nm line width) using electron beam lithography with chemically amplified resist processes: I. Relationship between sensitivity and chemical gradient

摘要

Electron beam (EB) lithography used for mask and mold fabrication is an indispensable technology in the lithography used for high-volume production of semiconductor devices. With the reduction in the critical dimensions of semiconductor devices, the requirement for EB lithography also becomes severe. In this study, the feasibility of single nano patterning using EB lithography with a chemically amplified resist process was investigated. The latent images of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) were calculated on the basis of sensitization and reaction mechanisms of chemically amplified EB resists. Simulations indicated that the line-and-space patterns with 7 nm quarter-pitch can be resolved with line edge roughness of 0.9-1.9 nm with a sensitivity of 270 mu C cm(-2) using a 3 nm electron beam. (C) 2015 The Japan Society of Applied Physics