Molecular-beam epitaxy of AlInN: An effect of source flux and temperature on indium atom incorporation in alloys

摘要

Growth of AlInN alloys by molecular-beam epitaxy is studied by reflection high-energy electron diffraction, where in-plane lattice constant and specular beam intensity oscillations are recorded for information of lattice misfit and growth rate as a function of source flux and temperature. An unexpected dependence of alloy growth rate on indium flux is observed, which reflects the specific incorporation kinetics of indium in the alloy. © 2010 American Institute of Physics.