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Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method

机译：使用与改性等离子体辅助掺杂方法集成的脉冲激光退火工艺实现了共形和超浅结形成

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Seunghun Baik; Dong-Jae Kwon; Hongki Kang; Jae Eun Jang; Jaewon Jang; Y. S. Kim; Hyuk-Jun Kwon;
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1. Ultra-shallow Junction Formation Using Plasma Doping and Excimer Laser Annealing for Nano-technology CMOS Applications [J] . Seung-Woo Do, Seong Ho KONG, Yong-Hyun LEE, Journal of the Korean Physical Society . 2009,第3aPta1期

机译：纳米技术CMOS应用等离子掺杂和准分子激光退火的超浅结形成
2. Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes [J] . Guk-Hyon Yon, Gyoung Ho Buh, Tai-su Park, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

机译：65纳米以下技术节点的等离子体掺杂和激光退火技术形成超浅结
3. Ultra shallow p(+) junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation [J] . Jin CG, Sasaki Y, Okashita K, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2005,第1a2期

机译：通过等离子体掺杂（PD）和长脉冲全固态激光退火（ASLA）和选择性吸收调制来形成超浅p（+）/ n结
4. Ultra-Shallow Junction Formation by Plasma doping and Excimer Laser Annealing [C] . Lak-Myung Jung, Seung-Woo Do, Jae-Min Kim, Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment . 2009

机译：等离子体掺杂和准分子激光退火形成超浅结
5. Germanosilicide contacts to ultra-shallow p(+)n junctions of nanoscale CMOS integrated circuits by selective deposition of in-situ doped silicon-germanium alloys. [D] . Liu, Jing. 2003

机译：锗硅化物通过选择性沉积原位掺杂的硅锗合金与纳米级CMOS集成电路的超浅p（+）n结接触。
6. Visible emission from Ce-doped ZnO nanorods grown by hydrothermal method without a post thermal annealing process [O] . Yong-Il Jung, Bum-Young Noh, Young-Seok Lee, 2012

机译：通过水热法生长的Ce掺杂的ZnO纳米棒的可见发射无需后热退火过程
7. Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies [O] . Kuang Kian Ong -1

机译：脉冲激光退火，用于形成用于纳米级金属氧化物半导体技术的超浅线
8. Ultra-shallow box-like profiles fabricated by pulsed UV-laser doping process. [R] . Ishida, E., Sigmon, T. W., Weiner, K. H. 1993

机译：通过脉冲紫外激光掺杂工艺制造的超浅盒状截面。

Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method

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