Ultra shallow p(+) junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation

摘要

Plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) was combined with the selective absorption modulation using SiO2 layer to form ultra-shallow p(+) junction. By depositing a controlled thickness of SiO, layer on top of the silicon substrate, we were able to confirm the reduction of laser energy density by 400 mJ/cm(2) (29%) and the formation of ultra-shallow junction at 12.7 nm (@10(18) cm(-3)) with R-s of 670 Omega/sq., which demonstrated the high feasibility of this new method. (c) 2005 Elsevier B.V. All rights reserved.