机译:低温固相外延与非熔融双脉冲绿色激光退火相结合形成硅中超浅p〜+ / n结
Department of Electronics and Electrical Engineering, Keio University, Yokohama 223-8522, Japan;
Department of Electronics and Electrical Engineering, Keio University, Yokohama 223-8522, Japan;
Department of Electronics and Electrical Engineering, Keio University, Yokohama 223-8522, Japan;
Department of Electronics and Electrical Engineering, Keio University, Yokohama 223-8522, Japan;
Department of Electronics and Electrical Engineering, Keio University, Yokohama 223-8522, Japan;
Department of Electronics and Electrical Engineering, Keio University, Yokohama 223-8522, Japan;
SEN Corporation, SBS Tower 9F, Setagaya, Tokyo 158-0097, Japan;
Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan;
机译:非熔融准分子和绿色激光退火在浅p〜+ / n结形成过程中硼在硅中的扩散比较
机译:等离子体注入硼的非熔融激光退火用于硅中的超浅结
机译:非熔融准分子激光退火在浅p + / n结形成过程中脉冲数对硅中掺杂物活化的影响
机译:低温固相外延和非熔融激光退火形成Si中的无扩散超浅p + sup> / n结
机译:固相外延在硅和蓝宝石上的硅的原位高分辨率透射电子显微镜。
机译:逐层原位原子层退火法制备AlN超薄膜的低温原子层外延
机译:通过非熔融准分子激光处理形成硅超浅结
机译:超高真空技术对硅结的低温外延。