首页>
外国专利>
Ultra-thin high-quality germanium on silicon by low-temperature epitaxy and insulator-capped annealing
Ultra-thin high-quality germanium on silicon by low-temperature epitaxy and insulator-capped annealing
展开▼
机译:低温外延和绝缘体封顶退火的超薄高质量硅基锗
展开▼
页面导航
摘要
著录项
相似文献
摘要
Exemplary embodiments provide semiconductor devices with a high-quality semiconductor material on a lattice mismatched substrate and methods for their manufacturing using low temperature growth techniques followed by an insulator-capped annealing process. The semiconductor material can have high-quality with a sufficiently low threading dislocation (TD) density, and can be effectively used for integrated circuit applications such as an integration of optically-active materials (e.g., Group III-V materials) with silicon circuitry. In an exemplary embodiment, the high-quality semiconductor material can include one or more ultra-thin high-quality semiconductor epitaxial layers/films/materials having a desired thickness on the lattice mismatched substrate. Each ultra-thin high-quality semiconductor epitaxial layer can be formed by capping a low-temperature grown initial ultra-thin semiconductor material, annealing the capped initial ultra-thin semiconductor material, and removing the capping layer.
展开▼