机译:高浓度锗和硼掺杂与低温退火相结合的金属/ p型硅界面的超低接触电阻率
Center for Semiconductor Research and Development, Semiconductor and Storage Products Company, Toshiba Corporation, Yokohama 235-8522, Japan;
Advanced Memory Development Center, Semiconductor and Storage Products Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan;
Center for Semiconductor Research and Development, Semiconductor and Storage Products Company, Toshiba Corporation, Yokohama 235-8522, Japan;
Advanced LSI Technology Laboratories, Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan;
Center for Semiconductor Research and Development, Semiconductor and Storage Products Company, Toshiba Corporation, Yokohama 235-8522, Japan;
机译:掺锗抑制p型直拉硅中的硼氧缺陷
机译:出版者的注释:“通过掺杂锗来抑制p型切克劳斯基硅中的硼氧缺陷”物理来吧97,051903(2010)
机译:出版者注:“通过掺杂锗来抑制p型切克劳斯基硅中的硼氧缺陷” [Appl。物理来吧97,051903(2010)]
机译:重硼掺杂和锗硅化镍接触对硅上拟态硅锗合金双轴压缩应变的影响
机译:低电阻率的锗硅化物接触层形成了用于纳米级CMOS的磷掺杂的硅锗合金源/漏结。
机译:通过简单的热退火高浓度掺杂硼的石墨烯纳米片及其超电容性能
机译:高效硅太阳能电池硼掺杂多晶硅钝化触点的非火金属化方法研究
机译:掺杂硼,镓和铟的p型硅的迁移率,电阻率和载流子密度