Atomic Layer Epitaxy of Silicon, Silicon/Germanium and Silicon Carbide viaExtraction/Exchange Processes

摘要

The primary focus of the research for this grant has been the atomic layerepitaxy (ALE) of Si; however, the ALE of SiC has also received serious consideration. A Computer assisted study, based on the free energy minimization of a thermodynamic system undergoing equilibrium reactions has shown that the progressive decomposition of SiH2Cl2 (the Si precursor of choice in this study) results in the products of SiCl2, H2, SiH2Cl2, HCl and Si. Moreover, above 600 C, SiCl2 is stable. Thus SiCl2 adsorbed onto the surface will not decompose. It is predicted to react with H2, forming Si on the surface.