METHOD OF SELECTIVELY PATTERNING SILICON GERMANIUM LAYER WITH ION IMPLANTATION FOR SELECTIVELY PATTERNING ONLY SILICON GERMANIUM LAYER WITHOUT PATTERNING TOP LAYER AND BOTTOM LAYER IN STACKED STRUCTURE OF SILICON LAYER/SILICON GERMANIUM LAYER/SILICON LAYER

摘要

PURPOSE: A method of selectively patterning a silicon germanium layer with ion implantation is provided to selectively pattern only the silicon germanium layer without patterning a top layer and a bottom layer in a stacked structure of silicon layer/silicon germanium layer/silicon layer. CONSTITUTION: A silicon germanium layer is introduced. Ions are selectively implanted into the silicon germanium layer. An etch-resistant characteristic is added to an ion-implanted part(250) except for an ion-free part of the silicon germanium layer. An etch process is performed to remove the ion-free part of the silicon germanium layer except for the ion-implanted part of the silicon germanium layer.