Institute of Microelectronics;
Tsinghua University;
Beijing 100084;
China Institute of Microelectronics;
Tsinghua University;
Beijing 100084;
China Institute of Microelectronics;
Tsinghua University;
Beijing 100084;
China Institute of Microelectronics;
Tsinghua University;
Beijing 100084;
China Institute of Microelectronics;
Tsinghua University;
Beijing 100084;
China Institute of Microelectronics;
Tsinghua University;
Beijing 100084;
China Institute of Microelectronics;
Tsinghua University;
Beijing 100084;
China Institute of Microelectronics;
Tsinghua University;
Beijing 100084;
China;
UHV/CVD; low; temperature; Si; epitaxy; dopant; profile; SiGe; HBT;