METHOD FOR FORMING ULTRA-SHALLOW HIGH QUALITY JUNCTIONS BY A COMBINATION OF SOLID PHASE EPITAXY AND LASER ANNEALING

摘要

By using a combination of solid phase epitaxy re-growth and laser annealing, the present invention provides a low thermal budget method which allows the crystal lattice of a semiconductor surface to recover after the doping by ion implantation. The low thermal budget limits the out-diffusion of the dopants ions, thus avoiding the enlargement of the doped source/drain regions. Therefore, the method is suited, for instance, for the fabrication of ultra-shallow source/drain regions in MOS transistors elements. The method according to the present invention comprises a first pre-amorphization process in order to limit channeling effects, a doping process by ion implantation and a re-crystallization by solid phase epitaxy, followed by laser annealing.