METHOD FOR FORMING SOURCE AND DRAIN FOR FINFET USING SOLID PHASE EPITAXY WITH LASER ANNEALING

摘要

Disclosed is a method which comprises a step of replacing an upper part of source and drain sections of a finFET structure having a sidewall and a first doping with doped amorphous silicon (a-Si) or amorphous silicon germanium (a-SiGe) having a second doping opposite to a first doping which extends above the sidewalls. The method also comprises a step of performing sub-melting laser annealing of the a-Si or a-SiGe to respectively form c-Si or c-SiGe to define source and drain regions of a finFET. Unconverted a-Si or a-SiGe is removed. The formed source and drain regions include an expanded area part which extends beyond an upper part of the sidewalls.;COPYRIGHT KIPO 2018