首页>
外国专利>
Methods of Forming Sources and Drains for FinFETs Using Solid Phase Epitaxy With Laser Annealing
Methods of Forming Sources and Drains for FinFETs Using Solid Phase Epitaxy With Laser Annealing
展开▼
机译:使用固相外延和激光退火形成FinFET的源极和漏极的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods disclosed herein include replacing top portions of source and drain sections of a finFET structure having sidewalls and a first doping with doped amorphous silicon (a-Si) or amorphous silicon germanium (a-SiGe) having a second doping opposite to a first doping and that extends above the sidewalls. Disclosed method also include performing sub-melt laser annealing of the a-Si or a-SiGe to respectively form c-Si or c-SiGe to define the source and drain regions of the finFET. Unconverted a-Si or a-SiGe is removed. The source and drain regions so formed include expanded-area portions that extend beyond the tops of the sidewalls.
展开▼