N-Channel MOSFETs With Embedded Silicon–Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy

摘要

In this letter, we report the use of a novel cluster-carbon $(hbox{C}_{7} hbox{H}_{7}^{+})$ implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon–carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration $C_{rm sub}$ of $sim$ 1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon–carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. $I_{rm OFF}{-}I_{rm DSAT}$ comparison shows a 15% $I_{rm DSAT}$ enhancement for n-FETs with embedded Si:C S/D at an $I_{rm OFF} = hbox{1} hbox{nA}/muhbox{m}$ despite a slightly higher series resistance.