机译:非熔融准分子和绿色激光退火在浅p〜+ / n结形成过程中硼在硅中的扩散比较
Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kouhoku-ku, Yokohama, Kanagawa 223-8522, Japan;
Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kouhoku-ku, Yokohama, Kanagawa 223-8522, Japan;
SEN Corporation, SBS Tower 9F, 4-10-1 Yoga, Setagaya-ku, Tokyo 158-0097, Japan;
Sumitomo Heavy Industries Ltd., 19 Natsushima-cho, Yokosuka, Kanagawa 237-8555, Japan;
anomalous diffusion; ion implantation; laser pulse duration; laser annealing; shallow junctions;
机译:非熔融准分子激光退火在浅p In结形成过程中硅中硼的扩散行为
机译:非熔融准分子激光退火在浅p + / n结形成过程中脉冲数对硅中掺杂物活化的影响
机译:低温固相外延与非熔融双脉冲绿色激光退火相结合形成硅中超浅p〜+ / n结
机译:锗预非晶化注入,预退火RTA和后退火非熔融准分子激光(NLA)工艺的结合,在浅p〜+ / n结形成过程中硼的扩散行为
机译:在快速辅助快速热退火过程中,硼的活化和扩散会改变硅的初始工艺条件。
机译:n硅与原子薄硼层之间的无掺杂结形成机理
机译:通过非熔融准分子激光处理形成硅超浅结