Boron diffusion behavior in silicon during shallow p In junction formation by non-melt excimer laser annealing

摘要

Boron diffusion in silicon during the formation of a shallow p'In junction has been studied. Low-energy/high-dose boron was implanted in germanium preamorphi/ed silicon. Prean-nealing involving rapid thermal annealing for 10 s, followed by annealing involving non-melt laser annealing for several nanoseconds were then performed to regrow the amorphous layer and to activate dopants. We found that this combination of processes results in anomalous diffusion of boron (despite the annealing being performed within several nanoseconds), which increases the junction depth of annealed samples.