Modeling of Trapping and Abrupt Doping Effects in MESFET's Using R-DynamicElement

摘要

A circuit model for the MESFET trapping and abrupt doping effects is presentedthat describes the small-signal output conductance and susceptance as a function of frequency and drain voltage. The frequency dependence is created using R-dynamic element. It is shown that the model simulates the measured properties of a sample MESFET in a qualitative manner.