METHOD AND DEVICE FOR DEACTIVATING TRAPPING EFFECTS IN DOPED SEMICONDUCTORS

摘要

The invention relates to a method for deactivating trapping effects in a semiconductor (6), an implementation of said method in a device, and a method for measuring the charge carrier density of free charge carriers in a semiconductor. The invention is characterized in that subband photons are injected into the semiconductor by means of a subband photon source (8) in order to deactivate the trapping effects. The subband photons are provided with energies that are smaller than the difference in energy between the valence band and the conduction band of the semiconductor.