The Effects of Electron and Hole Trapping on the Radiation Hardness of Al2O3 MIS(Metal Insulator Semiconductor) Devices

摘要

The radiation sensitivity of MIS structures incorporating thin films of pyrolytically deposited Al2O3 has been investigated for X-irradiations at 300 and 80K. Under most conditions the increased radiation hardness of this oxide relative to SiO2 can be attributed to the role played by electron traps, however under some conditions hole trapping is found to dominate the radiation behavior. Energy levels associated with these electron and hole trap levels have been investigated using the photodepopulation technique. The temperature at which the oxide was deposited was found to be an important factor in determining the density of these traps. (Author)