High Pressure Effects in Semiconductors Interband Scattering in Germanium

摘要

Experimental and theoretical work shows that there are minima in the conduction bands of germanium and silicon along the (111) and the (100) directions in k-space. The (111) minima at an energy E are the lowest minima in the conduction band of germanium;while the (100) minima at an energy E are lowest in silicon.nResults of the measurement of the pressure variation of the electrical conductivity of n-type germanium at several temperatures between 0℃ and 82 0℃ to 18,000kg/cm2 and at 76℃ to 30,000 kg/cm2 are presented.nThe interband scattering scattering theory is extended to predict the pressure behavior of the galvanomagnetic effect in n-type germanium.