Method of making semiconductor structure with germanium implant for reducing short channel effects and subthreshold current near the substrate surface

摘要

A semiconductor structure with germanium implant is provided for reducing V.sub.T shifts at the channel edges thereby minimizing short channel effects and subthreshold currents at or near the substrate surface. The semiconductor structure is adapted to receive non- perpendicular implant of germanium in the juncture between the channel and the source/drain regions as well as in the juncture between field oxide channel stop implant and source/drain regions. By carefully and controllably placing the germanium at select channel and field regions, segregation and redistribution of threshold adjust implant and channel stop implant dopant materials is substantially minimized. Reducing the redistribution of such materials provides a reduction in the short channel effects and, particularly, a reduction in substrate surface current or DIBL-induced current.