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MOS Transistor Model Influence of Variations in Carrier Mobility . Modele du Transistor MOS Influence des Variations de la Mobilite des Porteurs

机译：mOs晶体管模型对载流子迁移率变化的影响。 modele du Transistor mOs影响des mobariite des porteurs的变化

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General properties of MOS transistors and unidimensional models at constant mobility are considered. A study was conducted of the influence of an electric field on carrier mobility, for variation due to transverse and longitudinal fields. A model of a variable mobility MOS transistor is discussed. Various parameters of MOS transistors are also considered.

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Vassilieff, G.;
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年度 1971
页码 1-177
总页数 177
原文格式 PDF
正文语种 eng
中图分类工业技术;
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MOS Transistor Model Influence of Variations in Carrier Mobility . Modele du Transistor MOS Influence des Variations de la Mobilite des Porteurs

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