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Method and apparatus for determining a photolithography process model which models the influence of topography variations
Method and apparatus for determining a photolithography process model which models the influence of topography variations
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机译:用于确定对地形变化的影响建模的光刻工艺模型的方法和设备
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摘要
One embodiment provides a system for determining a process model for a photolithography process. The photolithography process can use multiple exposure-and-development steps to create features on a wafer. When the photolithography process exposes the wafer to a layout, the wafer can include topography variations which were caused by previous exposure-and-development steps. The process model can be used to predict patterns that are created on the wafer when the wafer is exposed to a second layout, wherein the wafer includes topography variations that were caused by resist features that were created when the wafer was exposed to a first layout. The process model can include a first term and a second term, wherein the first term is convolved with a sum of the first layout and the second layout, and wherein the second term is convolved with the second layout.
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