Influence of a carrier supply layer on carrier density and drift mobility of AlGaN/GaN/SiC high-electron-mobility transistors

摘要

Sheet carrier concentration and low-field drift mobility of intentionally undoped and modulation-doped AlGaN/GaN heterostructures on SiC substrate were evaluated by capacitance-voltage and channel conductivity measurements. Sheet carrier concentration and average mobility at 0 V gate bias correspond to standard Hall results. Sheet carrier density increases from 6.8x10(12) cm(-2) for the undoped sample up to 1x10(13) cm(-2) for the device with the highest doping concentration, while the mobility decreases from 1800 to 1620 cm(2)/V s. The local mobility, on the other hand, depends only on the actual sheet carrier density and is not influenced by the doping concentration of the carrier supply layer. It reaches a maximum value of 2100 cm(2)/V s at a carrier density of 3x10(12) cm(-2). (C) 2004 American Institute of Physics.