System for the Growth of Bulk Sic Crystals by Modified CVD Techniques

摘要

The goal of this program was the development of a SiC CVD growth of films thickenough to be useful as pseudo-substrates. The cold-walled CVD system was designed, assembled, and tested. Extrapolating from preliminary evaluation of SiC films grown in the system at relatively low temperatures indicates that the growth rate at the final temperatures will be high enough to make our approach practical. Modifications of the system to allow high temperature growth and cleaner growth conditions are in progress. This program was jointly funded by Wright Laboratory, Materials Directorate and NASA LeRC and monitored by NASA.