METHOD FOR COMPOSITE BONDING OF SEED CRYSTAL FOR GROWING SiC SINGLE CRYSTAL BY SOLUTION GROWTH TECHNIQUE

摘要

PROBLEM TO BE SOLVED: To provide a method for composite bonding of a seed crystal for growing a SiC single crystal by a solution growth technique, whereby high growth speed can be achieved by preventing breaking and separation of the seed crystal when growing the SiC single crystal by the solution growth technique.;SOLUTION: In the method for composite bonding of the seed crystal 7 for growing the SiC single crystal by the solution growth technique, the seed crystal 7 is placed at the tip of a carbon rod 1, the carbon rod 1 is obtained by bonding an anisotropic carbon material 8 coaxially oriented with the carbon rod 1 to an isotropic carbon material 9, and a disposition location at which the isotropic carbon material 9 is bonded to the seed crystal 7 is provided.;COPYRIGHT: (C)2010,JPO&INPIT