Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution

摘要

Crystallinity of 4H-SiC bulk crystals obtained by solution growth technique was characterized mainly by KOH etching of the off-ground and serially ground specimens. Marked reduction of basal plane dislocations, threading edge and screw dislocations during the growth of the on-axis crystal was confirmed. Cross-sectional TEM observation revealed the rapid reduction behavior of threading dislocations microscopically. AFM observation of as-grown morphology showed that screw dislocation dipoles are related to the reduction of threading screw dislocations and single domain formation, which is essential for establishing the high crystallinity.