Defect Formation and Electronic Transport at AlGaN/GaN Interfaces

摘要

We have calculated the effects of charged defects located near an Al(sub x) Ga(sub 1-x)N/GaN heterointerface on the transport properties of the two dimensional electron gas confined at the interface and also determined the distribution of those defects taking into consideration the dependence of the formation energy on the Fermi level. In addition, we have investigated the effects of hydrostatic pressure on such modulation doped heterostructures and find that pressure can be used to make the determination of the properties of the two dimensional electron gas easier by eliminating parallel three dimensional conduction paths.