首页> 美国政府科技报告 >Rapid thermal annealing effects in In(x)Ga(1-x)As/GaAs strained-layer superlattices.

【24h】

Rapid thermal annealing effects in In(x)Ga(1-x)As/GaAs strained-layer superlattices.

机译：In（x）Ga（1-x）as / Gaas应变层超晶格中的快速热退火效应。

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

The effect of repetitive rapid thermal annealing (RTA) at 800(degrees)C was investigated in the strained-layer superlattices (SLC's) In(sub .2)Ga(sub .8)As/GaAs (80(Angstrom)/80(Angstrom)) and In(sub .3)Ga(sub .7)As/GaAs (80(Angstrom)/80(Angstrom)) using ...

著录项

作者
J. A. Olsen E. L. Hu D. R. Myers J. F. Klem A. Skumanich;
展开▼
作者单位

展开▼
年度 1991
页码 1-9
总页数 9
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Annealing; EDB/360601; Gallium Arsenides; Gallium indium arsenides; Indium Arsenides; Photoluminescence; Superlattices;

机译：退火; EDB / 360601;砷化镓;砷化镓铟;砷化铟;光致发光;超晶格;

相似文献

外文文献
中文文献
专利

1. Effects of rapid thermal annealing on GaAs_(1-x)Bi_x alloys [J] . A. R. Mohmad, F. Bastiman, C. J. Hunter, Applied Physics Letters . 2012,第1期

机译：快速热退火对GaAs_（1-x）Bi_x合金的影响
2. The effects of rapid thermal annealing on the optical properties of Zn_(1-x)Mn_xSe epilayer grown by MOCVD on GaAs substrate [J] . S.L. Lu, J.N. Wang, J.S. Huang, Journal of Crystal Growth . 2003,第3a4期

机译：快速热退火对MOAs在GaAs衬底上生长的Zn_（1-x）Mn_xSe外延层光学性能的影响
3. Effects of rapid thermal annealing on properties of Ga-doped Mg_xZn_(1-x)O films and Ga-doped Mg_xZn_(1-x)O/AlGaN heterojunction diodes [J] . Kuang-Po Hsueh, Po-Wei Cheng Journal of Applied Physics . 2014,第6期

机译：快速热退火对掺杂Ga的Mg_xZn_（1-x）O薄膜和掺杂Ga的Mg_xZn_（1-x）O / AlGaN异质结二极管性能的影响
4. Rapid Thermal Annealing Effect On Valence-band Splitting Behavior in GaN{sub}xAs{sub}(1-x)/GaAs [C] . Z. L. Liu, P. P. Chen, C. Wang, International Conference on Infrared and Millimeter Waves . 2007

机译：GaN {Sub} {Sub}（1-x）/ GaAs中的基于价带分裂行为的快速热退火效应
5. Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices. [D] . Grant, Perry C. 2013

机译：快速热退火对MBE生长的光电器件GaAsBi / GaAs异质结构影响的研究。
6. Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing [O] . Hanxue Zhao, Soon Fatt Yoon, Chun Yong Ngo, 2011

机译：通过快速热退火改善1.3μmInAs / GaAs量子点激光器中的基态调制特性
7. Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors ud [O] . Fu L., Tan H.H., McKerracher I., 2006

机译：快速热退火对InGaas / Gaas量子点红外光电探测器器件特性的影响
8. Photoabsorption modulation in GaAs: Ga(1-x)In(x)As strained-layer superlattices. [R] . Sella, I., Watkins, D. E., Laurich, B. K., 1990

机译：Gaas中的光吸收调制：Ga（1-x）In（x）as应变层超晶格。

Rapid thermal annealing effects in In(x)Ga(1-x)As/GaAs strained-layer superlattices.

摘要

著录项

相似文献

相关主题

期刊订阅