Rapid Thermal Annealing Effect On Valence-band Splitting Behavior in GaN{sub}xAs{sub}(1-x)/GaAs

摘要

Our investigation is about rapid thermal annealing(RTA) effect on valence-band splitting(VBS) of GaN{sub}xAs{sub}(1-x). The observed VBS between light- and heavy-hole induced by lattice strain in GaN{sub}xAs{sub}(1-x) epilayers is gradually weakened by the RTA process. This could be attributed to strain relax caused by nitrogen reorganization after RTA.