Study of Ultra-Low Resistivity Material for Monolithically Integrated Npn and PnpAlGaAs/GaAs Heterojunction Bipolar Transistors

摘要

The initial scope of this program was to develop ultra-low-resistivity GaAs-basedmaterials for application to Npn and Pnp AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Due to early success in the program and to complement research and development activities at the U.S Army EPSD laboratory in Ft. Monmouth, NJ, the program scope was expanded to include photonic applications of HBTs including photodetector optical receivers and monolithic integration of PIN and HBT devices for high performance receivers.