Electronic Devices Grown on Off-Axis Sapphire Substrate.

摘要

An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off alpha-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1 - 10 micron thick semiconducting film disposed on the nucleating layer.