首页> 美国政府科技报告 >Quantum Magnetotransport in the Semimetal Channel at the Type II Broken- Gap GaInAsSb/InAs Heterojunction.

【24h】

Quantum Magnetotransport in the Semimetal Channel at the Type II Broken- Gap GaInAsSb/InAs Heterojunction.

机译：在II型断裂GaInassb / Inas异质结中的半金属通道中的量子磁传输。

获取原文

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

No abstract available.

著录项

作者
Berezovets, V. A.; Mikhailova, M. P.; Molseev, K. D.; Parfeniev, R. V.; Rozov, A. E.;
展开▼
作者单位

展开▼
年度 2000
页码 1-4
总页数 4
原文格式 PDF
正文语种
中图分类
关键词
Hall effect; Quantum electronics; Heterojunctions; Fermi surfaces; Russia; Gallium antimonides; Molecular beam epitaxy; Indium arsenides; Quantum hall effect; Component report; Foreign reports; Liquid phase epitaxy; Landau levels; Shubnikov de haas oscillations; Magnetotransport;

机译：霍尔效应;量子电子学;异质结;费米面;俄罗斯;锑化镓;分子束外延;砷化铟;量子霍尔效应;成分报告;外国报道;液相外延; Landau能级; shubnikov de haas振荡;磁电输运;

相似文献

外文文献
中文文献
专利

1. Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interface [J] . Maya P.Mikhailova, Konstantin D.Moiseev, Tamara I.Voronina, Physica, B. Condensed Matter . 2009,第23a24期

机译：界面为2D半金属通道的II型破碎间隙p-GaInAsSb / p-InAs：Mn异质结构中的磁杂质行为
2. Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb [J] . Voronina TI, Lagunova TS, Mikhailova MP, Semiconductors . 2006,第5期

机译：基于GaInAsSb / InAs和GaInAsSb / GaSb的II型异质结的磁输运性质
3. Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/p-InAs heterojunction [J] . Moiseev KD, Mikhailova MP, Yakovlev YP, Semiconductors . 2008,第9期

机译：II型断隙n-GaInAsSb / p-InAs异质结中的磁光致发光
4. Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interface [C] . Maya P. Mikhailova, Konstantin D. Moiseev, Tamara I. Voronina, Physica B: Condensed matter . 2009

机译：界面为2D半金属通道的II型破碎间隙p-GaInAsSb / p-InAs：Mn异质结构中的磁杂质行为
5. Epitaxial growth and characterization of narrow bandgap III-V semiconductors and related semimetals. [D] . Choi, Sukgeun. 2006

机译：窄带隙III-V半导体及相关半金属的外延生长和表征。
6. Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers [O] . Marcin Motyka, Grzegorz Sęk, Krzysztof Ryczko, 2015

机译：II型InAs / GaInAsSb量子阱中的界面混合设计用于中红外发射带间级联激光器的有源区域
7. Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers [O] . Motyka, Marcin, Sęk, Grzegorz, Ryczko, Krzysztof, 2016

机译：II型InAs / GaInAsSb量子阱中的界面混合设计用于中红外发射带间级联激光器的有源区域

Quantum Magnetotransport in the Semimetal Channel at the Type II Broken- Gap GaInAsSb/InAs Heterojunction.

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅