New Approach for Combined Epitaxial Metallization and Heavy Doping of Shallow Junctions

摘要

This short-term innovative research project investigated the epitaxial growth of silicon deposited from the vapor phase onto an Al-covered silicon substrate. The 60 nm Al layer behaved as if it were transparent to the Si flux. The silicon cleanly passed through the Al layer to the buried Al/Si interface where it formed a defect-free Si layer on the original single crystal Si substrate. The new growth method is referred to as solid-metal mediated molecular beam epitaxy (SMM-MBE). Most of the work focused on Si(1 11), but some initial results were also obtained for Si(1OO).