Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si

摘要

The diffusion and gettering of oxygen are investigated after low-energy arsenic implantation and furnaceudannealing of SiO2/Si structures. Secondary ion mass spectrometry was used for examination of arsenicudand oxygen depth profiles. It is shown that arsenic-doped ultra-shallow junction in Si stimulates theudbackground oxygen gettering by SiO2/Si interface at the annealing temperatures higher than 850 C.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35166