Patterning of GaN Crystal Films with Ion Beams and Subsequent Wet Etching

摘要

The invention provides a method for etching gallium nitride (GaN) comprising the steps of providing a GaN film; imagewise amorphizing a portion of the GaN film by ion implantation to form an amorphized portion; and wet etching of the GaN film having an amorphized portion to remove the amorphized portion. When the imagewise amorphizing process can be done without a mask, such as with a focused implantation ion beam, the process itself becomes maskless.