InP-Based Heterostructure Design and Growth for Semiconductor Nanomembrane Optoelectronics on Si and on Flexible Substrates

摘要

The focus of this project has been on the realization of ultracompact microcavity lasers directly integrated on silicon. Using a stamp- assisted transfer-printing technology, silicon membrane-reflector vertical- cavity surface-emitting lasers (MR-VCSELs) based on transferred InGaAsP multiple-quantum well structures and two single-layer Fano resonance photonic crystal membrane reflectors on silicon substrate have been realized. Optically pumped MR-VCSELs are demonstrated as well as electrically pumped light-emitters on silicon. The demonstration of ultra-compact and DBR-free VCSELs directly incorporated on a silicon substrate using a viable multimembrane transfer- printing process can be expected to be of major interest for a range of applications in optoelectronics, photonic devices and photonics-electronics integration. The present results obtained here constitute an important first step towards the ultimate realization of low-threshold, energy-energy efficient MR-VCSELs on silicon or other substrates.