Defect Engineering and Defect Complexes in Compound Semiconductors Alloys

摘要

This grant investigated various aspects of defect-engineered compound semiconductor films and heterostructures. The research studied in detail the impact of intentional defect introduction into semiconductor heterojunction device structures. The impact of intentional defect introduction is on the formation, properties and structure of heterointerfaces is of particular interest in these studies. We continued the development of submicron probes to obtain highly localized information on electronic structure and optical properties, coupled with the topology of the film using Near Field Scanning Optical Microscopy as a photoluminescence probe and as a scanning photoreflectance probe. This grant also looked at the means to use localized stress to alter the motion of dislocation developed at a lattice-mismatched heterointerface.